Get Amorphous Silicon / Crystalline Silicon Heterojunction Solar PDF

By Wolfgang Rainer Fahrner (auth.), Wolfgang Rainer Fahrner (eds.)

ISBN-10: 3642370381

ISBN-13: 9783642370380

ISBN-10: 364237039X

ISBN-13: 9783642370397

Amorphous Silicon/Crystalline Silicon sun Cells bargains with a few ordinary houses of heterojunction sun cells, corresponding to their background, the homes and the demanding situations of the cells, a few very important measurementtools, a few simulation courses and a short survey of the cutting-edge, aiming to supply an preliminary framework during this box and function a prepared reference for all these drawn to the topic. This booklet is helping to “fill within the blanks” on heterojunction sunlight cells. Readers will obtain a finished review of the foundations, buildings, processing recommendations and the present developmental states of the units.

Prof. Dr. Wolfgang R. Fahrner is a professor on the collage of Hagen, Germany and Nanchang collage, China.

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Extra info for Amorphous Silicon / Crystalline Silicon Heterojunction Solar Cells

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The measured network reflects the contribution of the junction, C1 and G1 = 1/R1, of the interface states, Cit and Git, and of the series resistance, R3 (Fig. 28a). In a first step, R3 is subtracted from Rs,meas. R3 is known as the high-frequency series resistance of Fig. 28a. Thus, only the series components Zs,corr between the upper terminal and the T-point above R3 are left over (Fig. 28b). Now, these data are converted to a parallel network, Yp = 1/Zs,corr (Fig. 28c). The Yp components are seen in Fig.

16, displaying the absorption, reflection, and transmission spectra of ITO deposited on glass. 38 W. R. 2 Excess Charge Carrier Lifetime The foremost problem in Si-based solar cells is the suppression of recombination processes. A very sensitive tool for the characterization of the charge carrier kinetics in silicon in general but especially for the evaluation of electronic passivation of Si-interfaces is the contactless conductivity measurement, such as the interaction with megahertz magnetic fields (QSSPC), with microwaves (l-WPCD, TRMC, TRPC, FRMC…), terahertz pulses or sub-bandgap infrared light.

The effective carrier lifetime at different carrier densities is determined via seff = -Dn/(dDn/dt). Figure 35 illustrates a schematic of the used setup for QSSPC and TPCD measurements. 46 W. R. Fahrner Combining the Two Measurement Modi Evaluating the measured effective lifetime over the widest possible range of the excess carrier density (ECD), measurements of QSSPC/TPCD data analyzed in the corresponding QSS, generalized, or transient mode, are combined. After Kerr and Cuevas, the strength in using both QSSPC and TPCD methods to determine the effective carrier lifetime is that while the two methods are complementary, they also have different dependencies on the system calibration constants.

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Amorphous Silicon / Crystalline Silicon Heterojunction Solar Cells by Wolfgang Rainer Fahrner (auth.), Wolfgang Rainer Fahrner (eds.)


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